IPA100N08N3GXKSA1
MOSFET N-CH 80V 40A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPA100N08N3GXKSA1 is an N-Channel Power MOSFET with a drain-source voltage (Vdss) of 80 V. This component offers a continuous drain current (Id) of 40 A at 25°C (Tc) and a maximum power dissipation of 35 W (Tc). The Rds On is specified at a maximum of 10 mOhm at 40 A and 10 V gate drive. Key characteristics include a gate charge (Qg) of 35 nC at 10 V and input capacitance (Ciss) of 2410 pF at 40 V. The IPA100N08N3GXKSA1 features a through-hole mounting type in a PG-TO220-FP package. It operates across a temperature range of -55°C to 175°C (TJ) and supports gate-source voltages up to ±20V, with a threshold voltage (Vgs(th)) of 3.5 V at 46 µA. This MOSFET is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 46µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2410 pF @ 40 V |
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