IPA093N06N3GXKSA1
MOSFET N-CH 60V 43A TO220-3-31Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPA093N06N3GXKSA1 is a 60V N-Channel OptiMOS™ power MOSFET in a PG-TO220-3-31 package. This device offers a low on-resistance of 9.3mOhm at 40A and 10V Vgs, with a continuous drain current capability of 43A at 25°C. The IPA093N06N3GXKSA1 features a maximum power dissipation of 33W (Tc) and a gate charge of 48nC (max) at 10V Vgs. It is designed for efficient power switching applications across various industries, including automotive and industrial automation. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 43A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.3mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 33W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 34µA |
| Supplier Device Package | PG-TO220-3-31 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 30 V |
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