IPA083N10NM5SXKSA1
MOSFET N-CH 100V 50A TO220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™5 series N-Channel Power MOSFET, IPA083N10NM5SXKSA1. This robust component features a 100V drain-source voltage (Vdss) and a continuous drain current of 50A at 25°C (Tc). With a low on-resistance (Rds On) of 8.3mOhm at 25A and 10V (Vgs), it is optimized for efficient power conversion. The device offers 36W of power dissipation at 25°C (Tc) and operates within an extended temperature range of -55°C to 175°C (TJ). Key parameters include a gate charge (Qg) of 40 nC at 10V (Vgs) and an input capacitance (Ciss) of 2700 pF at 50V (Vds). The IPA083N10NM5SXKSA1 is housed in a PG-TO220 Full Pack package, suitable for through-hole mounting. This component finds application in various power electronics systems, including industrial power supplies and automotive applications.
Additional Information
Series: OptiMOS™5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.3mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 36W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 49µA |
| Supplier Device Package | PG-TO220 Full Pack |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 50 V |
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