IPA060N06NM5SXKSA1
MOSFET N-CH 60V 56A TO220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™5 IPA060N06NM5SXKSA1 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This through-hole component features a 60V drain-source voltage and a continuous drain current of 56A at 25°C (Tc), with a maximum power dissipation of 33W (Tc). The IPA060N06NM5SXKSA1 exhibits a low on-resistance of 6mOhm at 56A and 10V, achieved with a 10V gate drive. Key parameters include a gate charge of 36 nC @ 10V and input capacitance of 2600 pF @ 30V. The device operates within an extended temperature range of -55°C to 175°C (TJ). This MOSFET is suitable for various industries including automotive, industrial power supplies, and motor control. It is supplied in a PG-TO220 Full Pack package.
Additional Information
Series: OptiMOS™5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 56A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 33W (Tc) |
| Vgs(th) (Max) @ Id | 3.3V @ 36µA |
| Supplier Device Package | PG-TO220 Full Pack |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 30 V |
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