IPA041N04NGXKSA1
MOSFET N-CH 40V 70A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPA041N04NGXKSA1 is a 40V N-channel MOSFET with a continuous drain current rating of 70A at 25°C (Tc). This component features a low on-resistance of 4.1mOhm at 70A and 10V Vgs, and a maximum power dissipation of 35W (Tc). Key electrical characteristics include a gate charge of 56 nC (max) at 10V Vgs and an input capacitance of 4500 pF (max) at 20V Vds. The device operates within an extended temperature range of -55°C to 175°C (TJ) and is housed in a PG-TO220-FP package suitable for through-hole mounting. It finds application in power management, automotive, and industrial sectors requiring efficient switching.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.1mOhm @ 70A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 45µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 20 V |
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