IPA040N08NM5SXKSA1
TRENCH 40<-<100V PG-TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPA040N08NM5SXKSA1 is an N-Channel Power MOSFET from the OptiMOS™ series. This component offers a drain-source voltage (Vdss) of 80 V and a continuous drain current (Id) of 75 A at 25°C (Tc). It features a low on-resistance (Rds On) of 4 mOhm at 38 A and 10 V, with a gate charge (Qg) of 93 nC at 10 V. The IPA040N08NM5SXKSA1 is housed in a PG-TO220-FP package, suitable for through-hole mounting. Its maximum power dissipation is 39 W (Tc), and it operates within a temperature range of -55°C to 175°C (TJ). This device is utilized in applications such as power supplies and motor control.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 38A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 39W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 109µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 93 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6400 pF @ 40 V |
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