IPA037N08N3GXKSA1
MOSFET N-CH 80V 75A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPA037N08N3GXKSA1 is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 80 V and a continuous drain current (Id) of 75 A at 25°C (Tc). The IPA037N08N3GXKSA1 offers a low on-resistance (Rds On) of 3.7 mOhm at 75 A and 10 V. Its through-hole mounting type and PG-TO220-FP package facilitate integration into various electronic designs. With a maximum power dissipation of 41 W (Tc) and an operating junction temperature range of -55°C to 175°C, this MOSFET is suitable for use in power supply units, motor control, and automotive applications. Key electrical parameters include a gate charge (Qg) of 117 nC at 10 V and input capacitance (Ciss) of 8110 pF at 40 V.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 41W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 155µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 117 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8110 pF @ 40 V |
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