IPA030N10N3GXKSA1
MOSFET N-CH 100V 79A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPA030N10N3GXKSA1 is an N-Channel Power MOSFET from the OptiMOS™ series. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 79A at 25°C with a maximum power dissipation of 41W (Tc). The IPA030N10N3GXKSA1 offers a low on-resistance (Rds On) of 3mOhm at 79A and 10V, with a gate charge (Qg) of 206 nC at 10V.
Designed for through-hole mounting, it utilizes the PG-TO220-FP package. Key electrical characteristics include an input capacitance (Ciss) of 14800 pF at 50V and a threshold voltage (Vgs(th)) of 3.5V at 270µA. The operating temperature range is from -55°C to 175°C (TJ). This MOSFET is suitable for applications in the automotive and industrial sectors.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 79A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 79A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 41W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 270µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 206 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14800 pF @ 50 V |
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