IPA029N06NM5SXKSA1
MOSFET N-CH 60V 87A TO220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPA029N06NM5SXKSA1 is an N-Channel MOSFET from the OptiMOS™5 series. This component offers a 60V drain-to-source voltage (Vdss) and a continuous current rating of 87A at 25°C (Tc). It features a low on-resistance (Rds On) of 2.9mOhm at 87A and 10V (Vgs). The device is housed in a PG-TO220 Full Pack package suitable for through-hole mounting. Key electrical characteristics include a maximum gate charge (Qg) of 74 nC at 10V and an input capacitance (Ciss) of 5300 pF at 30V. This MOSFET is designed for applications requiring high efficiency and power density. Its robust construction and performance parameters make it suitable for demanding power conversion and management systems across various industrial sectors.
Additional Information
Series: OptiMOS™5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 87A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.9mOhm @ 87A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 38W (Tc) |
| Vgs(th) (Max) @ Id | 3.3V @ 36µA |
| Supplier Device Package | PG-TO220 Full Pack |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 74 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5300 pF @ 30 V |
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