IPA028N08N3GXKSA1
MOSFET N-CH 80V 89A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPA028N08N3GXKSA1 is an N-Channel Power MOSFET from the OptiMOS™ series. This component features a Drain-Source Voltage (Vdss) of 80V and a continuous Drain Current (Id) of 89A at 25°C (Tc). The low on-resistance (Rds On) of 2.8mOhm at 89A and 10V gate drive, coupled with a maximum Gate Charge (Qg) of 206nC at 10V, ensures efficient switching performance. With a maximum power dissipation of 42W (Tc) and a junction temperature range of -55°C to 175°C, this MOSFET is suitable for demanding applications. The IPA028N08N3GXKSA1 utilizes a PG-TO220-FP package for through-hole mounting. Its robust design makes it a reliable choice for power supply, motor control, and automotive applications.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 89A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 89A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 270µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 206 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14200 pF @ 40 V |
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