IPA028N04NM3SXKSA1
TRENCH <= 40V PG-TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies presents the IPA028N04NM3SXKSA1, an N-Channel OptiMOS™ Power MOSFET. This component features a 40V drain-source voltage and a continuous drain current of 89A at 25°C (Tc). With a maximum power dissipation of 38W (Tc), it offers a low on-resistance of 2.8mOhm at 89A and 10V Vgs. The device utilizes TRENCH MOSFET technology and is housed in a PG-TO220-FP package, suitable for through-hole mounting. Key parameters include a maximum gate charge of 120 nC at 10V and input capacitance of 9500 pF at 20V. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly employed in automotive and industrial power management applications.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 89A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 89A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 38W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 95µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9500 pF @ 20 V |
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