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IMZC120R017M2HXKSA1

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IMZC120R017M2HXKSA1

IMZC120R017M2HXKSA1

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 1200 V 97A (Tc) Through Hole

Additional Information

Series: CoolSiC™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-4
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologySiC (Silicon Carbide Junction Transistor)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C97A (Tc)
FET Feature-
Vgs(th) (Max) @ Id5.1V @ 12.7mA
Grade-
Drive Voltage (Max Rds On, Min Rds On)15V, 18V
Vgs (Max)+23V, -7V
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs89 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds2910 pF @ 800 V
Qualification-

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