IMZA75R016M1HXKSA1
SILICON CARBIDE MOSFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 750 V 89A (Tj) 319W (Tc) Through Hole PG-TO247-4
Additional Information
Series: CoolSiC™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 89A (Tj) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 41.5A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 319W (Tc) |
| Vgs(th) (Max) @ Id | 5.6V @ 14.9mA |
| Supplier Device Package | PG-TO247-4 |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 20V |
| Vgs (Max) | +23V, -5V |
| Drain to Source Voltage (Vdss) | 750 V |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2869 pF @ 500 V |
| Qualification | - |
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