IMZA65R015M2HXKSA1
SILICON CARBIDE MOSFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 650 V 103A (Tc) 341W (Tc) Through Hole PG-TO247-4-8
Additional Information
Series: CoolSiC™ Gen 2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 103A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.2mOhm @ 64.2A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 341W (Tc) |
| Vgs(th) (Max) @ Id | 5.6V @ 13mA |
| Supplier Device Package | PG-TO247-4-8 |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 20V |
| Vgs (Max) | +23V, -7V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 79 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2792 pF @ 400 V |
| Qualification | - |
Request a Quote
Clients Also Buy
IMW65R050M2HXKSA1
SILICON CARBIDE MOSFET
IMBG120R026M2HXTMA1
SIC DISCRETE
IMW65R020M2HXKSA1
SILICON CARBIDE MOSFET
