IMZA120R014M1HXKSA1
SIC DISCRETEManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies' IMZA120R014M1HXKSA1 is a CoolSiC™ N-Channel SiCFET designed for high-performance power applications. This discrete MOSFET features a 1200 V drain-source voltage and a continuous drain current capability of 127 A at 25°C (Tc), with a maximum power dissipation of 455 W (Tc). The device exhibits a low on-resistance of 18.4 mOhm at 54.3 A and 18 V gate-source voltage. Key parameters include a gate charge of 145 nC at 18 V and input capacitance of 4580 pF at 25 V. The IMZA120R014M1HXKSA1 utilizes a TO-247-4 package with through-hole mounting and operates across a wide temperature range of -55°C to 175°C. This component is suitable for use in industrial power supplies, electric vehicle charging, and motor drives.
Additional Information
Series: CoolSiC™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 127A (Tc) |
| Rds On (Max) @ Id, Vgs | 18.4mOhm @ 54.3A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 455W (Tc) |
| Vgs(th) (Max) @ Id | 5.2V @ 23.4mA |
| Supplier Device Package | PG-TO247-4-8 |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Vgs (Max) | +20V, -5V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 145 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4580 pF @ 25 V |
| Qualification | - |
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