IMWH170R1K0M1XKSA1
IMWH170R1K0M1XKSA1Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 1700 V 5.4A (Tj) 70W (Tc) Through Hole PG-TO247-3-U04
Additional Information
Series: CoolSiC™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.4A (Tj) |
| Rds On (Max) @ Id, Vgs | 880mOhm @ 1A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 5.7V @ 1.2mA |
| Supplier Device Package | PG-TO247-3-U04 |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 12V, 15V |
| Vgs (Max) | 15V, 12V |
| Drain to Source Voltage (Vdss) | 1700 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.5 nC @ 12 V |
| Input Capacitance (Ciss) (Max) @ Vds | 233 pF @ 1000 V |
| Qualification | - |
Request a Quote
Clients Also Buy
IMBF170R1K0M1XTMA1
SICFET N-CH 1700V 5.2A TO263-7
IMBG120R350M1HXTMA1
SICFET N-CH 1.2KV 4.7A TO263
IMBF170R650M1XTMA1
SICFET N-CH 1700V 7.4A TO263-7
