IMW65R083M1HXKSA1
SILICON CARBIDE MOSFET, PG-TO247Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 650 V 24A (Tc) 104W (Tc) Through Hole PG-TO247-3-41
Additional Information
Series: CoolSiC™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 111mOhm @ 11.2A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 5.7V @ 3.3mA |
| Supplier Device Package | PG-TO247-3-41 |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +20V, -2V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 624 pF @ 400 V |
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