IMW65R048M1HXKSA1
MOSFET 650V NCH SIC TRENCHManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 650 V 39A (Tc) 125W (Tc) Through Hole PG-TO247-3-41
Additional Information
Series: CoolSIC™ M1RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 39A (Tc) |
| Rds On (Max) @ Id, Vgs | 64mOhm @ 20.1A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 5.7V @ 6mA |
| Supplier Device Package | PG-TO247-3-41 |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +23V, -5V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1118 pF @ 400 V |
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