IMW120R045M1XKSA1
SICFET N-CH 1.2KV 52A TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolSiC™ IMW120R045M1XKSA1 is an N-channel SiCFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 1200 V and a continuous Drain current (Id) of 52 A at 25°C (Tc). With a maximum power dissipation of 228 W (Tc) and a low on-resistance (Rds On) of 59 mOhm at 20 A and 15 V drive voltage, it offers excellent efficiency. The device has a gate charge (Qg) of 52 nC at 15 V and an input capacitance (Ciss) of 1900 pF at 800 V. Operating temperature ranges from -55°C to 175°C (TJ). The IMW120R045M1XKSA1 is available in a PG-TO247-3-41 package suitable for through-hole mounting. This SiCFET is utilized in demanding sectors such as industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: CoolSiC™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 52A (Tc) |
| Rds On (Max) @ Id, Vgs | 59mOhm @ 20A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 228W (Tc) |
| Vgs(th) (Max) @ Id | 5.7V @ 10mA |
| Supplier Device Package | PG-TO247-3-41 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | +20V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 800 V |
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