IMT65R163M1HXUMA1
SILICON CARBIDE MOSFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
650 V Surface Mount PG-HSOF-8-2
Additional Information
Series: CoolSiC™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | - |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | PG-HSOF-8-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 650 V |
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