IMT65R039M1HXTMA1
SILICON CARBIDE MOSFET PG-HSOF-8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IMT65R039M1HXTMA1 is an advanced Silicon Carbide (SiC) MOSFET designed for high-performance power applications. This discrete power MOSFET features a PG-HSOF-8 package, optimized for efficient thermal management and robust electrical performance. Leveraging Infineon's cutting-edge SiC technology, this device offers superior switching characteristics and lower conduction losses compared to traditional silicon-based solutions. Its design makes it suitable for demanding applications across various industries, including electric vehicle charging infrastructure, industrial motor drives, and renewable energy systems where efficiency and reliability are paramount. The IMT65R039M1HXTMA1 is supplied in Tape & Reel packaging for automated assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
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