IMT65R022M1HXTMA1
SILICON CARBIDE MOSFET PG-HSOF-8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IMT65R022M1HXTMA1 is a 650V, 22mO silicon carbide (SiC) MOSFET housed in a PG-HSOF-8 package. This discrete power device leverages SiC technology for superior performance characteristics, including higher breakdown voltage, lower on-resistance, and faster switching speeds compared to traditional silicon-based MOSFETs. Its robust construction and efficient operation make it suitable for demanding applications in power conversion systems. The IMT65R022M1HXTMA1 is typically employed in server power supplies, industrial motor drives, electric vehicle charging infrastructure, and renewable energy systems where high efficiency and power density are critical. Packaged in Tape & Reel (TR) for automated assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
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