IMT40R025M2HXTMA1
SIC-MOSManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 400 V 9A (Ta), 68A (Tc) 3.8W (Ta), 214W (Tc) Surface Mount PG-HSOF-8-2
Additional Information
Series: CoolSiC™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 97 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 8-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 68A (Tc) |
| Rds On (Max) @ Id, Vgs | 32.1mOhm @ 15.7A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 214W (Tc) |
| Vgs(th) (Max) @ Id | 5.6V @ 5.6mA |
| Supplier Device Package | PG-HSOF-8-2 |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Vgs (Max) | +23V, -7V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1690 pF @ 200 V |
| Qualification | - |