IMDQ75R040M1HXUMA1
SILICON CARBIDE MOSFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 750 V 47A (Tc) 211W (Tc) Surface Mount PG-HDSOP-22-1
Additional Information
Series: CoolSiC™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Digi-Reel®Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | 22-PowerBSOP Module |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
| Rds On (Max) @ Id, Vgs | 37mOhm @ 16.6A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 211W (Tc) |
| Vgs(th) (Max) @ Id | 5.6V @ 6mA |
| Supplier Device Package | PG-HDSOP-22-1 |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 20V |
| Vgs (Max) | +23V, -5V |
| Drain to Source Voltage (Vdss) | 750 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1135 pF @ 500 V |
| Qualification | - |
Request a Quote
Clients Also Buy
IMBF170R1K0M1XTMA1
SICFET N-CH 1700V 5.2A TO263-7
IMBG120R350M1HXTMA1
SICFET N-CH 1.2KV 4.7A TO263
IMBF170R650M1XTMA1
SICFET N-CH 1700V 7.4A TO263-7
