IMBG40R011M2HXTMA1
SIC-MOSManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 400 V 13.4A (Ta), 133A (Tc) 3.8W (Ta), 429W (Tc) Surface Mount PG-TO263-7-11
Additional Information
Series: CoolSiC™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.4A (Ta), 133A (Tc) |
| Rds On (Max) @ Id, Vgs | 14.4mOhm @ 37.1A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 429W (Tc) |
| Vgs(th) (Max) @ Id | 5.6V @ 13.3mA |
| Supplier Device Package | PG-TO263-7-11 |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Vgs (Max) | +23V, -7V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 85 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3770 pF @ 200 V |
| Qualification | - |
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