IMBG120R090M1HXTMA1
SICFET N-CH 1.2KV 26A TO263Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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N-Channel 1200 V 26A (Tc) 136W (Tc) Surface Mount PG-TO263-7-12
Additional Information
Series: CoolSiC™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 8.5A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 5.7V @ 3.7mA |
| Supplier Device Package | PG-TO263-7-12 |
| Vgs (Max) | +18V, -15V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 763 pF @ 800 V |
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