IMBG120R017M2HXTMA1
SIC DISCRETEManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 1200 V 107A (Tc) 470W (Tc) Surface Mount PG-TO263-7-12
Additional Information
Series: CoolSiC™ Gen 2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 107A (Tc) |
| Rds On (Max) @ Id, Vgs | 17.1mOhm @ 40.4A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 470W (Tc) |
| Vgs(th) (Max) @ Id | 5.1V @ 12.7mA |
| Supplier Device Package | PG-TO263-7-12 |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Vgs (Max) | +23V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 89 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2910 pF @ 800 V |
| Qualification | - |
Request a Quote
Clients Also Buy
IMW65R050M2HXKSA1
SILICON CARBIDE MOSFET
IMBG120R026M2HXTMA1
SIC DISCRETE
IMW65R020M2HXKSA1
SILICON CARBIDE MOSFET
