IGT60R190D1SATMA1
GANFET N-CH 600V 12.5A 8HSOFManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Infineon Technologies IGT60R190D1SATMA1 is a CoolGaN™ series N-Channel GaNFET with a Drain-to-Source Voltage (Vdss) of 600V. This surface mount device, packaged in PG-HSOF-8-3 (8-PowerSFN), offers a continuous drain current (Id) of 12.5A at 25°C and a maximum power dissipation of 55.5W. Key electrical characteristics include a threshold voltage (Vgs(th)) of 1.6V at 960µA and an input capacitance (Ciss) of 157 pF at 400V. The operating temperature range is -55°C to 150°C. This component is suitable for high-frequency power conversion applications across industries such as server power, industrial power supplies, and renewable energy systems. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: CoolGaN™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.5A (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | 55.5W (Tc) |
| Vgs(th) (Max) @ Id | 1.6V @ 960µA |
| Supplier Device Package | PG-HSOF-8-3 |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | -10V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 157 pF @ 400 V |
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