IGT60R190D1ATMA1
GAN HVManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies IGT60R190D1ATMA1 is a high-performance Gallium Nitride (GaN) High Voltage power transistor. This device leverages advanced GaN HEMT technology to deliver superior efficiency and power density for demanding applications. Designed for high-frequency switching, the IGT60R190D1ATMA1 offers exceptionally low on-resistance and fast switching characteristics, minimizing power losses and enabling compact system designs. Its robust construction and thermal performance make it suitable for use in electric vehicle charging, industrial power supplies, and renewable energy systems. The component is supplied in a Tape & Reel (TR) package for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
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