IGT60R070D1E8220ATMA1
GAN HVManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolGaN™ IGT60R070D1E8220ATMA1 is an N-Channel GaNFET designed for high-voltage applications. This component features a 600 V drain-source voltage rating and a continuous drain current of 31 A at 25°C (Tc). With a maximum power dissipation of 125 W (Tc), it is suitable for demanding power conversion tasks. The device utilizes the PG-HSOF-8-3 package, a surface-mount 8-PowerSFN, ensuring efficient thermal management. Its input capacitance (Ciss) is specified at 380 pF at 400 V. Operating across a temperature range of -55°C to 150°C (TJ), this GaNFET is found in sectors such as industrial power supplies, electric vehicle charging, and server power.
Additional Information
Series: CoolGaN™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 1.6V @ 2.6mA |
| Supplier Device Package | PG-HSOF-8-3 |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | -10V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 400 V |
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