IGT60R070D1ATMA1
GANFET N-CH 600V 31A 8HSOFManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolGaN™ IGT60R070D1ATMA1 is a 600V N-Channel GaNFET designed for high-performance power applications. This device features a continuous drain current of 31A (Tc) and a maximum power dissipation of 125W (Tc). The IGT60R070D1ATMA1 is housed in an 8-PowerSFN package, specifically the PG-HSOF-8-3, suitable for surface mount configurations. Its Gallium Nitride technology enables efficient operation with an input capacitance (Ciss) of 380 pF @ 400 V. The operating temperature range is -55°C to 150°C (TJ). This component finds utility in various industries including power supplies, server and telecom infrastructure, industrial power, and electric vehicle charging.
Additional Information
Series: CoolGaN™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 1.6V @ 2.6mA |
| Supplier Device Package | PG-HSOF-8-3 |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | -10V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 400 V |
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