IGT60R042D1ATMA1
GAN HVManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies' CoolGaN™ IGT60R042D1ATMA1 is a 600V Gallium Nitride (GaN) Field-Effect Transistor (FET) suitable for high-voltage applications. This device features a surface mount PG-HSOF-8-3 package, also known as 8-PowerSFN, designed for efficient thermal management. The GaNFET technology offers superior performance characteristics compared to traditional silicon-based power devices, enabling higher switching frequencies and reduced power losses. This component is widely utilized in power conversion systems across various industries, including consumer electronics, industrial automation, and electric vehicle charging infrastructure. The IGT60R042D1ATMA1 is supplied in a Tape & Reel (TR) configuration for automated assembly processes.
Additional Information
Series: CoolGaN™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | - |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | PG-HSOF-8-3 |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 600 V |
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