IGT40R070D1E8220ATMA1
GAN N-CH 400V 31A HSOF-8-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies IGT40R070D1E8220ATMA1 is an N-Channel GaNFET from the CoolGaN™ series. This component features a 400 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 31 A at 25°C (Tc). With a maximum power dissipation of 125 W (Tc), it is designed for demanding applications. The device offers a low input capacitance (Ciss) of 382 pF at 320 V and a gate-source threshold voltage (Vgs(th)) of 1.6 V at 2.6 mA, with a maximum gate-source voltage (Vgs) of ±10 V. Packaged in PG-HSOF-8-3 (8-PowerSFN) and supplied on tape and reel, this surface-mount component operates within a temperature range of 0°C to 150°C (TJ). Its advanced Gallium Nitride technology makes it suitable for high-efficiency power conversion in applications such as server power supplies, industrial power systems, and renewable energy inverters.
Additional Information
Series: CoolGaN™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 0°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 1.6V @ 2.6mA |
| Supplier Device Package | PG-HSOF-8-3 |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 400 V |
| Input Capacitance (Ciss) (Max) @ Vds | 382 pF @ 320 V |
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