IGOT60R070D1E8237AUMA1
GAN HVManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolGaN™ IGOT60R070D1E8237AUMA1 is an N-channel GaNFET designed for high-voltage applications. This component features a 600 V drain-source breakdown voltage and a continuous drain current of 31 A at 25°C (Tc), with a maximum power dissipation of 125 W (Tc). The device is housed in a PG-DSO-20-87 package, a 20-lead PowerSOIC, suitable for surface mounting. Key parameters include an input capacitance (Ciss) of 380 pF at 400 V and a gate threshold voltage (Vgs(th)) of 1.6 V at 2.6 mA. The operating temperature range is -55°C to 150°C (TJ). This component is utilized in power conversion systems across various industries, including telecommunications, industrial automation, and consumer electronics. It is supplied in Tape & Reel packaging.
Additional Information
Series: CoolGaN™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 20-PowerSOIC (0.433"", 11.00mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 1.6V @ 2.6mA |
| Supplier Device Package | PG-DSO-20-87 |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | -10V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 400 V |
Request a Quote
Clients Also Buy
IGT60R070D1ATMA4
GANFET N-CH
IGLD60R190D1AUMA3
GAN HV
IGLD60R070D1AUMA3
GANFET N-CH
