IGOT60R070D1AUMA1
GANFET N-CH 600V 31A 20DSOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies N-Channel CoolGaN™ GaNFET, part number IGOT60R070D1AUMA1, offers a 600V drain-to-source voltage and 31A continuous drain current at 25°C. This surface mount device, packaged in a PG-DSO-20-87 (20-PowerSOIC), features a maximum power dissipation of 125W. With a typical input capacitance of 380pF at 400V, this GaNFET is suitable for high-frequency power conversion applications. The operating temperature range is -55°C to 150°C. This component is commonly utilized in power supplies, electric vehicle charging, and industrial motor control systems.
Additional Information
Series: CoolGaN™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 20-PowerSOIC (0.433"", 11.00mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 1.6V @ 2.6mA |
| Supplier Device Package | PG-DSO-20-87 |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | -10V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 400 V |
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