IGOT60R042D1AUMA2
GANFET N-CHManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Infineon Technologies IGOT60R042D1AUMA2 is a 600V N-Channel GaNFET designed for surface mount applications. This component utilizes Gallium Nitride technology, offering advanced performance characteristics for demanding power conversion solutions. Packaged in a PG-DSO-20-87 (20-PowerSOIC) format, it is supplied on Tape & Reel (TR) for automated assembly. Its high voltage capability and efficient switching are well-suited for applications in electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 20-PowerSOIC (0.433"", 11.00mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | - |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | PG-DSO-20-87 |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 600 V |
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