IGO60R070D1E8220AUMA1
GAN HVManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies' CoolGaN™ IGO60R070D1E8220AUMA1 is an N-Channel GaNFET designed for high-voltage applications. This component features a Drain to Source Voltage (Vdss) of 600 V and a continuous drain current (Id) of 31A at 25°C (Tc). With a maximum power dissipation of 125W (Tc), it is suitable for demanding power conversion tasks in industries such as industrial power supplies, server power, and electric vehicle charging. The device utilizes the PG-DSO-20-85 package for surface mounting, offering a 20-PowerSOIC footprint. Key parameters include an input capacitance (Ciss) of 380 pF at 400 V and an operating temperature range of -55°C to 150°C (TJ).
Additional Information
Series: CoolGaN™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 20-PowerSOIC (0.433"", 11.00mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 1.6V @ 2.6mA |
| Supplier Device Package | PG-DSO-20-85 |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | -10V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 400 V |
Request a Quote
Clients Also Buy
IGT60R070D1ATMA4
GANFET N-CH
IGLD60R190D1AUMA3
GAN HV
IGLD60R070D1AUMA3
GANFET N-CH
