IGO60R070D1AUMA2
GAN HVManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolGaN™ IGO60R070D1AUMA2 is a 600 V N-Channel GaNFET designed for high-power applications. This device features a continuous drain current of 31A (Tc) and a maximum power dissipation of 125W (Tc). With a low on-resistance, indicated by its GaNFET technology, it offers efficient power conversion. The input capacitance (Ciss) is 380 pF at 400 V. The IGO60R070D1AUMA2 is supplied in a PG-DSO-20-85 package, a 20-PowerSOIC surface mount configuration, on tape and reel. It operates across a temperature range of -55°C to 150°C (TJ). This component is suitable for use in power supplies, electric vehicle charging, and industrial power solutions.
Additional Information
Series: CoolGaN™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 20-PowerSOIC (0.433"", 11.00mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 1.6V @ 2.6mA |
| Supplier Device Package | PG-DSO-20-85 |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | -10V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 400 V |
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