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IGO60R070D1AUMA1

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IGO60R070D1AUMA1

GANFET N-CH 600V 31A 20DSO

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies' IGO60R070D1AUMA1 is a 600V N-Channel GaNFET from the CoolGaN™ series. This surface mount device, packaged in a PG-DSO-20-85 (20-PowerSOIC), offers a continuous drain current of 31A (Tc) and a maximum power dissipation of 125W (Tc). It features a threshold voltage (Vgs(th)) of 1.6V at 2.6mA and an input capacitance (Ciss) of 380 pF at 400V. Operating across a temperature range of -55°C to 150°C (TJ), this component is suitable for high-efficiency power conversion applications, including server power supplies, industrial power supplies, and electric vehicle charging infrastructure. The device is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: CoolGaN™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case20-PowerSOIC (0.433"", 11.00mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C31A (Tc)
Rds On (Max) @ Id, Vgs-
FET Feature-
Power Dissipation (Max)125W (Tc)
Vgs(th) (Max) @ Id1.6V @ 2.6mA
Supplier Device PackagePG-DSO-20-85
Drive Voltage (Max Rds On, Min Rds On)-
Vgs (Max)-10V
Drain to Source Voltage (Vdss)600 V
Input Capacitance (Ciss) (Max) @ Vds380 pF @ 400 V

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