IGO60R042D1AUMA2
GAN HVManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies' CoolGaN™ IGO60R042D1AUMA2 is a 600 V Gallium Nitride (GaN) power transistor in a PG-DSO-20-85 surface mount package. This device utilizes GaNFET technology for high-performance power conversion applications. The 20-PowerSOIC package, with an 11.00mm width, is supplied on tape and reel for automated assembly. This component is suitable for demanding applications in areas such as server power supplies, industrial power, and electric vehicle charging infrastructure where high efficiency and power density are critical.
Additional Information
Series: CoolGaN™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 20-PowerSOIC (0.433"", 11.00mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | - |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | PG-DSO-20-85 |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 600 V |
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