IGLR60R340D1XUMA1
GAN HVManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolGaN™ IGLR60R340D1XUMA1 is an N-Channel GaNFET designed for high-voltage applications. This component offers a 600 V drain-source voltage and a continuous drain current of 8.2 A at 25°C (Tc), with a maximum power dissipation of 41.6 W at 25°C (Tc). The device features a low input capacitance of 87.7 pF at 400 V. It is packaged in an 8-PowerTDFN (PG-TSON-8-7) and suitable for surface mounting. Typical applications include power conversion in server power supplies, electric vehicle charging, and industrial power systems. The operating temperature range is -40°C to 150°C (TJ).
Additional Information
Series: CoolGaN™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.2A (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | 41.6W (Tc) |
| Vgs(th) (Max) @ Id | 1.6V @ 530µA |
| Supplier Device Package | PG-TSON-8-7 |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | -10V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 87.7 pF @ 400 V |
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