IGLR60R260D1E8238XUMA1
GAN HVManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolGaN™ series N-channel power transistor, part number IGLR60R260D1E8238XUMA1, is a 600 V device with a continuous drain current of 10.4 A (Tc) and a maximum power dissipation of 52 W (Tc). This GaNFET technology is housed in a PG-TSON-8-7 (8-PowerTDFN) surface mount package, supplied on tape and reel. Key parameters include a typical input capacitance of 110 pF @ 400 V. This component is suitable for high-frequency power conversion applications across industries such as consumer electronics, industrial power supplies, and electric vehicle charging infrastructure.
Additional Information
Series: CoolGaN™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.4A (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | 52W (Tc) |
| Vgs(th) (Max) @ Id | 1.6V @ 690µA |
| Supplier Device Package | PG-TSON-8-7 |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | -10V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 110 pF @ 400 V |
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