IGLR60R190D1XUMA1
GAN HVManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolGaN™ IGLR60R190D1XUMA1 is an N-Channel Gallium Nitride Field-Effect Transistor designed for high-voltage applications. This device features a 600 V drain-to-source breakdown voltage and a continuous drain current of 12.8 A at 25°C (Tc), with a maximum power dissipation of 55.5 W (Tc). The IGLR60R190D1XUMA1 utilizes GaNFET technology, offering superior switching performance compared to traditional silicon-based MOSFETs. Its input capacitance (Ciss) is rated at a maximum of 157 pF at 400 V. The transistor is supplied in an 8-PowerTDFN package, specifically the PG-TSON-8-6, suitable for surface mounting. It operates over an extended temperature range from -40°C to 150°C (TJ) and is delivered in Tape & Reel (TR) packaging. This component is commonly employed in power conversion systems within the automotive and industrial sectors.
Additional Information
Series: CoolGaN™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.8A (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | 55.5W (Tc) |
| Vgs(th) (Max) @ Id | 1.6V @ 960µA |
| Supplier Device Package | PG-TSON-8-6 |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | -10V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 157 pF @ 400 V |
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