IGLR60R190D1E8238XUMA1
GAN HVManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolGaN™ IGLR60R190D1E8238XUMA1 is an N-Channel GaNFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 12.8 A at 25°C (Tc). The maximum power dissipation is rated at 55.5 W (Tc). With an input capacitance (Ciss) of 157 pF at 400 V, this device is suitable for demanding power conversion and management tasks. The IGLR60R190D1E8238XUMA1 is available in a PG-TSON-8-6 package, utilizing a surface mount technology. Its operating temperature range is -40°C to 150°C (TJ). This device is commonly found in power supplies, electric vehicle charging, and industrial power systems.
Additional Information
Series: CoolGaN™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.8A (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | 55.5W (Tc) |
| Vgs(th) (Max) @ Id | 1.6V @ 960µA |
| Supplier Device Package | PG-TSON-8-6 |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | -10V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 157 pF @ 400 V |
Request a Quote
Clients Also Buy
IGT60R070D1ATMA4
GANFET N-CH
IGLD60R190D1AUMA3
GAN HV
IGLD60R070D1AUMA3
GANFET N-CH
