IGLD60R190D1SAUMA1
GAN HV PG-LSON-8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies presents the IGLD60R190D1SAUMA1, an N-Channel GaNFET from the CoolGaN™ series. This component features a 600 V drain-to-source voltage and a continuous drain current of 10 A at 25°C (Tc), with a maximum power dissipation of 62.5 W (Tc). The device is housed in a PG-LSON-8-1 surface mount package, specifically an 8-LDFN exposed pad. Key characteristics include a Vgs(th) of 1.6V at 960µA and a maximum gate-source voltage of -10V. Input capacitance (Ciss) is specified at 157 pF @ 400 V. Operating temperature ranges from -55°C to 150°C (TJ). This component is suitable for applications in power conversion, server power supplies, and industrial motor drives. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: CoolGaN™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-LDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 1.6V @ 960µA |
| Supplier Device Package | PG-LSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | -10V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 157 pF @ 400 V |
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