IGLD60R190D1AUMA3
GAN HVManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolGaN™ IGLD60R190D1AUMA3 is an N-Channel GaNFET designed for high-voltage applications. This component features a 600 V drain-source voltage and a continuous drain current of 10 A at 25°C (Tc), with a maximum power dissipation of 62.5 W (Tc). The device utilizes the PG-LSON-8-1 package with an exposed pad, suitable for surface mounting. Key parameters include a maximum input capacitance (Ciss) of 157 pF at 400 V and a threshold voltage (Vgs(th)) of 1.6 V at 960 µA. The operating temperature range is -55°C to 150°C (TJ). This component is commonly found in power supply units, charging solutions, and industrial motor drives. The IGLD60R190D1AUMA3 is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: CoolGaN™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-LDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 1.6V @ 960µA |
| Supplier Device Package | PG-LSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | -10V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 157 pF @ 400 V |
Request a Quote
Clients Also Buy
IGT60R070D1ATMA4
GANFET N-CH
IGLD60R070D1AUMA3
GANFET N-CH
IGLR60R260D1XUMA1
GAN HV
