IGLD60R190D1AUMA1
GAN N-CH 600V 10A LSON-8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolGaN™ IGLD60R190D1AUMA1 is a 600V N-Channel Gallium Nitride (GaN) power transistor. This device offers a continuous drain current of 10A (Tc) and a maximum power dissipation of 62.5W (Tc). It features a low on-resistance characteristic of GaN technology. The IGLD60R190D1AUMA1 is housed in an 8-LDFN exposed pad package, specifically the PG-LSON-8-1, suitable for surface mounting. Key parameters include a Vds of 600V and a Vgs(th) of 1.6V @ 960µA. Input capacitance (Ciss) is specified at 157 pF @ 400 V. This component operates across a temperature range of -55°C to 150°C (TJ) and is supplied on tape and reel (TR). Applications include high-efficiency power conversion in sectors such as datacenter power, industrial power supplies, and consumer electronics.
Additional Information
Series: CoolGaN™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-LDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 1.6V @ 960µA |
| Supplier Device Package | PG-LSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | -10V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 157 pF @ 400 V |
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