IGLD60R070D1AUMA1
GANFET N-CH 600V 15A LSON-8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies presents the IGLD60R070D1AUMA1, a CoolGaN™ series N-Channel GaNFET. This surface mount device features a 600V drain-to-source voltage (Vdss) and a continuous drain current capability of 15A (Tc). The 8-LDFN exposed pad package, identified as PG-LSON-8-1, facilitates efficient thermal management with a maximum power dissipation of 114W (Tc). Key parameters include a typical input capacitance (Ciss) of 380 pF at 400V and a gate threshold voltage (Vgs(th)) of 1.6V at 2.6mA. Operating across a temperature range of -55°C to 150°C (TJ), this component is suitable for applications in power supply, industrial automation, and electric vehicle charging infrastructure. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: CoolGaN™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-LDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | 114W (Tc) |
| Vgs(th) (Max) @ Id | 1.6V @ 2.6mA |
| Supplier Device Package | PG-LSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | -10V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 400 V |
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