IAUZ40N10S5N130ATMA1
MOSFET N-CH 100V 40A 8TSDSON-33Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™-5 N-Channel Power MOSFET, part number IAUZ40N10S5N130ATMA1, features 100V drain-source breakdown voltage and a continuous drain current of 40A at 25°C (Tc). This AEC-Q101 qualified device offers a low on-resistance of 13mOhm maximum at 20A and 10V Vgs. The PG-TSDSON-8-33 package provides a compact footprint for surface mounting. Key parameters include a gate charge (Qg) of 24nC at 10V and input capacitance (Ciss) of 1525pF at 50V. Designed for demanding automotive applications, this MOSFET exhibits a maximum power dissipation of 68W (Tc) and operates across a wide temperature range of -55°C to 175°C (TJ).
Additional Information
Series: OptiMOS™-5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 68W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 27µA |
| Supplier Device Package | PG-TSDSON-8-33 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1525 pF @ 50 V |
| Qualification | AEC-Q101 |
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