IAUZ40N10S5L120ATMA1
MOSFET_(75V 120V( PG-TSDSON-8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IAUZ40N10S5L120ATMA1 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 46A at 25°C. With a maximum Rds(on) of 12mOhm at 20A and 10V Vgs, it offers low conduction losses. The device is packaged in an 8-PowerTDFN (PG-TSDSON-8-33) and supplied on Tape & Reel. Key parameters include a Gate Charge (Qg) of 22.6 nC (max) at 10V and an Input Capacitance (Ciss) of 1589 pF (max) at 50V. Operating temperature range is -55°C to 175°C (TJ), with a maximum power dissipation of 62W (Tc). This component is suitable for use in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 46A (Tj) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 62W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 27µA |
| Supplier Device Package | PG-TSDSON-8-33 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 22.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1589 pF @ 50 V |
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